Pierce Lonergan Alumni Homecoming Talk: Molecular Beam Epitaxy of Novel Nitrides and Their Future in Electronics and Photonics

Pierce Lonergan

Grad Student

Cornell University

https://www.linkedin.com/in/pierce-lonergan/?isSelfProfile=false

A Ph.D. candidate in Electrical and Computer Engineering focused on the growth and characterization of complex nitride semiconductors using molecular beam epitaxy (MBE). His research spans the synthesis of metastable and compositionally complex materials, including AlScN and InScN, with an emphasis on understanding how growth conditions influence structure, morphology, and device-relevant properties.



A central theme of his work is the role of rare-earth and transition-metal elements in tuning nitride semiconductor behavior. In addition to scandium-based systems, he has experience working with yttrium-containing materials, exploring how rare-earth incorporation impacts epitaxial growth, phase stability, and electronic properties.

His work combines thin-film epitaxy, in-situ and ex-situ characterization, and device-oriented materials engineering to bridge fundamental materials physics with applications in electronics and optoelectronics. He is particularly interested in how growth science can be used to enable new nitride heterostructures and device architectures.

He is motivated by advancing the understanding of non-traditional nitride systems and translating that understanding into functional semiconductor technologies through careful control of materials growth.